Dopants and Defects
in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects
in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. This book contains papers on the microscopic identification of electronic defects
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in Semiconductors: Symposium Held April 15-18, 1985, San Francisco, California, U.S.A Hardcover – Sep 1 1985.
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in Semiconductors (0.0 avg rating, 0 ratings, 0 reviews, published 198...
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in semiconductors: Combining experiment and theory ... It is usually applied to address only the electronic structure, based on atomic structures obtained from DFT.20,21 ... identification of the microscopic structure.41 Since EPR relies on the presence of unpaired
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in Semiconductors) 1985 , 13 Microscopic Identification of Defects
in Semiconductors by … The goal of the research program described herein was to provide insight into the identity and properties of point defects
in semiconductors. Particular emphasis was devoted to problems involving microscopic identification, metastable properties, defect migration, and diffusion of point defects
in semiconductors.
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